Numerical Insights into the Influence of Electrical Properties of n-CdS Buffer Layer on the Performance of SLG/Mo/p-Absorber/n-CdS/n-ZnO/Ag Configured Thin Film Photovoltaic Devices

A CdS thin film buffer layer has been widely used as conventional n-type heterojunction partner both in established and emerging photovoltaic devices. In this study, we perform numerical simulation to elucidate the influence of electrical properties layer, essentially terms carrier mobility concentration on performance SLG/Mo/p-Absorber/n-CdS/n-ZnO/Ag configured devices, by using Solar Cell Capacitance Simulator (SCAPS-1D). wide range p-type absorber layers with a band gap from 0.9 1.7 eV electron affinity 3.7 4.7 have considered study. For an ideal (no defect), do not significantly alter maximum attainable efficiency. Generally, it was revealed that for conduction offset (CBO) is more than 0.3 eV, Jsc strongly dependent whereas Voc predominantly back contact barrier height. However, bulk defect density increased 1014 1018 cm−3, higher imperative requirement yield device conversion efficiency larger gap-CBO window realization functional device. Most tellingly, outcomes study reveal play decisive role determining progress photo-absorber materials, particularly during embryonic development stage.